Recent developments in the III-nitride materials
Identifieur interne : 000230 ( Russie/Analysis ); précédent : 000229; suivant : 000231Recent developments in the III-nitride materials
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Abstract
We review a selection of recent research work on III-nitride materials, limiting the scope to bulk properties and quantum well structures. The different stages of development of the compounds AIN, GaN and InN are illustrated, with reference to the electronic properties demonstrated so far. The important alloy systems AlxGa1-xN and InxGa1-xN have quite different properties, still not understood in detail for high Al and In contents, respectively. Some important unresolved issues are highlighted, and possible future directions of the materials development are indicated.
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Bergman</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Chemistry and Biology, Linköping University</s1><s2>581 83 Linkoping</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>581 83 Linkoping</wicri:noRegion></affiliation></author><author><name sortKey="Toropov, A A" uniqKey="Toropov A">A. A. Toropov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute, Russian Academy of Sciences</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Shubina, T V" uniqKey="Shubina T">T. V. Shubina</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute, Russian Academy of Sciences</s1><s2>St. Petersburg 194021</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0284051</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0284051 INIST</idno><idno type="RBID">Pascal:07-0284051</idno><idno type="wicri:Area/Main/Corpus">007C40</idno><idno type="wicri:Area/Main/Repository">007193</idno><idno type="wicri:Area/Russie/Extraction">000230</idno></publicationStmt><seriesStmt><idno type="ISSN">0370-1972</idno><title level="j" type="abbreviated">Phys. status solidi, B, Basic res.</title><title level="j" type="main">Physica status solidi. B. Basic research</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium nitrides</term><term>Electronic structure</term><term>Gallium nitrides</term><term>Indium nitrides</term><term>Nitrides</term><term>Quantum wells</term><term>Reviews</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Structure électronique</term><term>Article synthèse</term><term>Nitrure</term><term>Puits quantique</term><term>Gallium nitrure</term><term>Indium nitrure</term><term>Aluminium nitrure</term><term>7321F</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We review a selection of recent research work on III-nitride materials, limiting the scope to bulk properties and quantum well structures. The different stages of development of the compounds AIN, GaN and InN are illustrated, with reference to the electronic properties demonstrated so far. The important alloy systems Al<sub>x</sub>Ga<sub>1-x</sub>N and In<sub>x</sub>Ga<sub>1-x</sub>N have quite different properties, still not understood in detail for high Al and In contents, respectively. Some important unresolved issues are highlighted, and possible future directions of the materials development are indicated.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0370-1972</s0></fA01><fA02 i1="01"><s0>PSSBBD</s0></fA02><fA03 i2="1"><s0>Phys. status solidi, B, Basic res.</s0></fA03><fA05><s2>244</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Recent developments in the III-nitride materials</s1></fA08><fA11 i1="01" i2="1"><s1>MONEMAR (B.)</s1></fA11><fA11 i1="02" i2="1"><s1>PASKOV (P. P.)</s1></fA11><fA11 i1="03" i2="1"><s1>BERGMAN (J. P.)</s1></fA11><fA11 i1="04" i2="1"><s1>TOROPOV (A. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>SHUBINA (T. 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